STF11NM65N دیتاشیت

STF11NM65N

مشخصات دیتاشیت

نام دیتاشیت STF11NM65N
حجم فایل 68.796 کیلوبایت
نوع فایل pdf
تعداد صفحات 21

دانلود دیتاشیت STF11NM65N

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سایر مستندات

STx(x)11NM65N 21 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STF11NM65N
  • Operating Temperature: +150°C@(Tj)
  • Power Dissipation (Pd): 25W
  • Total Gate Charge (Qg@Vgs): 29nC@10V
  • Drain Source Voltage (Vdss): 650V
  • Input Capacitance (Ciss@Vds): 800pF@50V
  • Continuous Drain Current (Id): 11A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 2.9pF@50V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 425mΩ@10V,5.5A
  • Package: TO-220
  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: STF11
  • detail: N-Channel 650V 11A (Tc) 25W (Tc) Through Hole TO-220FP

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